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2SB1236A - Power Transistor

Key Features

  • High breakdown voltage. (BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency. (fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.
  • Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector 2SB1275 power dissipation 2SB1236A Junction temperature Symbol VCBO VCEO VEBO IC PC Tj Limits.
  • 160.
  • 160.
  • 5.
  • 1.5.
  • 3 1 10 1 15.

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Datasheet Details

Part number 2SB1236A
Manufacturer ROHM
File Size 107.98 KB
Description Power Transistor
Datasheet download datasheet 2SB1236A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power Transistor (160V, 1.5A) 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector 2SB1275 power dissipation 2SB1236A Junction temperature Symbol VCBO VCEO VEBO IC PC Tj Limits −160 −160 −5 −1.5 −3 1 10 1 150 Storage temperature Tstg −55 to +150 ∗ 1 Single pulse Pw=100ms ∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.