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2SB1239 Datasheet PDF

ROHM Semiconductor 2SB1239

Power transistor

Part No. 2SB1239
Datasheet 2SB1239 Download
Manufacturer
ROHM Semiconductor
Description Power transistor
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2SB1239 datasheet page 1 preview

FEATURES

1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1759 / 2SD1861. !External dimensions (Units : mm) 2SB1183 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 !Equivalent circuit 1.0 0.5 C 0.5 1.0 0.9 14.5 4.4 1.5 2.5 9.5 B RBE 4kΩ ROHM : CPT3 EIAJ : SC-63 E (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) C : Collector B : Base E : Emitter 2SB1239 6.8 2.5 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SB1183 2SB1239 Tj Tstg Symbol VCBO VCER VEBO IC Limits −40 −40 −5 −2 −3 1 10 1 150 −55~+150 Unit V V V A(DC) A(Pulse) W W(Tc=25°C) W °C °C 0.65Max. 0.5 (1) (2) (3) ∗1 2.54 2.54 1.05 2.3 0.45 0.8Min. PC ∗2 Taping specifications ROHM : ATV ∗1 Single pulse Pw=10ms ∗2 Printed circuit board 1.7 mm thick, collector plating 100mm2 or larger. (1) Emitter (2)...