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2SB1238 - Medium power transistor

Download the 2SB1238 datasheet PDF. This datasheet also covers the 2SB1189 variant, as both devices belong to the same medium power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859.
  • Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO.
  • 80 Collector-emitter voltage VCEO.
  • 80 Emitter-base voltage VEBO.
  • 5 Collector current IC.
  • 0.7 Collector power dissipation 2SB1189 2SB1238 PC 0.5 2 1 Junction temperature Tj 150 Storage temperature Tstg.
  • 55 to +150 ∗1 When mounted on a 40×40×0.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB1189-ROHM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SB1238
Manufacturer ROHM
File Size 89.37 KB
Description Medium power transistor
Datasheet download datasheet 2SB1238 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO −80 Collector-emitter voltage VCEO −80 Emitter-base voltage VEBO −5 Collector current IC −0.7 Collector power dissipation 2SB1189 2SB1238 PC 0.5 2 1 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 ∗1 When mounted on a 40×40×0.7 mm ceramic board. ∗2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.