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2SB1283 - PNP Transistor

General Description

High DC Current Gain- : hFE= 1500(Min.)@IC= -3A Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -3A Good Linearity of hFE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High power switching applications.

Hamm

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Part Number Description Manufacturer
2SB1283 Darlington Transistor Shindengen Electric Mfg.Co.Ltd
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isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 1500(Min.)@IC= -3A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak -100 V -100 V -7 V -7 A -10 A IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.