2SB1286
2SB1286 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High DC Current Gain-
:h FE = 1000(Min)@ IC= -1A
- Collector-Emitter Breakdown Voltage-
:V(BR)CEO = -100V(Min)
- Low Collector-Emitter Saturation Voltage
:VCE(sat) = -1.5V(Max)@ IC= -1A
- plement to Type 2SD1646
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-8
Collector Current-Continuous
-2
Collector Current-Peak
Collector Power Dissipation TC=25℃
Tj
Junction...
