2SB1286 Overview
Description
With TO-220C package - Complement to type 2SD1646 - DARLINGTON - High DC current gain APPLICATIONS - For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter DESCRIPTION SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -2 25 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA,IB=0 IC=-1mA,IE=0 IE=-5mA, IC=0 IC=-1A ,IB=-1mA IC=-1A ,IB=-1mA VCB=-100V, IE=0 VCE=-100V, IB=0 VEB=-7V, IC=0 IC=-1A ; VCE=-2V 1000 MIN -100 -100 -7 2SB1286 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO ICEO IEBO hFE TYP. MAX UNIT V V V -1.5 -2.0 -10 -100 -5 10000 V V µA µA mA 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1286 Fig.2 Outline dimensions 3.
