Datasheet Details
| Part number | 2SB1286 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.96 KB |
| Description | PNP Transistor |
| Download | 2SB1286 Download (PDF) |
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| Part number | 2SB1286 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.96 KB |
| Description | PNP Transistor |
| Download | 2SB1286 Download (PDF) |
|
|
|
·High DC Current Gain- :hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- :V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage :VCE(sat) = -1.5V(Max)@ IC= -1A ·Complement to Type 2SD1646 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -3 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1286 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA, IB= 0 -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA, IE= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A;
isc Silicon PNP Darlington Power Transistor 2SB1286.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1286 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1283 | PNP Transistor |
| 2SB1284 | PNP Transistor |
| 2SB1287 | PNP Transistor |
| 2SB1289 | PNP Transistor |
| 2SB1205 | PNP Transistor |
| 2SB1223 | PNP Transistor |
| 2SB1225 | PNP Transistor |
| 2SB1226 | PNP Transistor |
| 2SB1227 | PNP Transistor |
| 2SB1228 | PNP Transistor |