Part 2SB1286
Description PNP Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 210.96 KB
Inchange Semiconductor

2SB1286 Overview

Description

High DC Current Gain- :hFE = 1000(Min)@ IC= -1A - Collector-Emitter Breakdown Voltage- :V(BR)CEO = -100V(Min) - Low Collector-Emitter Saturation Voltage :VCE(sat) = -1.5V(Max)@ IC= -1A - Complement to Type 2SD1646 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.