Datasheet Details
| Part number | 2SB1289 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.73 KB |
| Description | PNP Transistor |
| Download | 2SB1289 Download (PDF) |
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| Part number | 2SB1289 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.73 KB |
| Description | PNP Transistor |
| Download | 2SB1289 Download (PDF) |
|
|
|
·High Collector Current:: IC= -7A ·Low Collector Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1580 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -7 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1289 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA;
isc Silicon PNP Power Transistor 2SB1289.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1289 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1283 | PNP Transistor |
| 2SB1284 | PNP Transistor |
| 2SB1286 | PNP Transistor |
| 2SB1287 | PNP Transistor |
| 2SB1205 | PNP Transistor |
| 2SB1223 | PNP Transistor |
| 2SB1225 | PNP Transistor |
| 2SB1226 | PNP Transistor |
| 2SB1227 | PNP Transistor |
| 2SB1228 | PNP Transistor |