Inchange Semiconductor 2SB1283
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SB1283 |
|---|---|
| Datasheet | 2SB1283 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain- : hFE= 1500(Min.)@IC= -3A●Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -3A
●Good Linearity of hFE
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●High power switching applications.●Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak -100 V -100 V -7 V -7 A -10 A IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A -1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1283 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Darlingtion Power Transistor 2SB1283ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;...