Click to expand full text
isc Silicon PNP Darlingtion Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 1500(Min.)@IC= -3A ·Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak
-100
V
-100
V
-7
V
-7
A
-10
A
IB
Base Current-Continuous
IBM
Base Current-peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.