Datasheet Details
| Part number | 2SB1283 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.56 KB |
| Description | PNP Transistor |
| Download | 2SB1283 Download (PDF) |
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Overview: isc Silicon PNP Darlingtion Power Transistor.
| Part number | 2SB1283 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.56 KB |
| Description | PNP Transistor |
| Download | 2SB1283 Download (PDF) |
|
|
|
·High DC Current Gain- : hFE= 1500(Min.)@IC= -3A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak -100 V -100 V -7 V -7 A -10 A IB Base Current-Continuous IBM Base Current-peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.5 A -1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1283 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlingtion Power Transistor 2SB1283 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1283 | Darlington Transistor | Shindengen Electric Mfg.Co.Ltd |
| Part Number | Description |
|---|---|
| 2SB1284 | PNP Transistor |
| 2SB1286 | PNP Transistor |
| 2SB1287 | PNP Transistor |
| 2SB1289 | PNP Transistor |
| 2SB1205 | PNP Transistor |
| 2SB1223 | PNP Transistor |
| 2SB1225 | PNP Transistor |
| 2SB1226 | PNP Transistor |
| 2SB1227 | PNP Transistor |
| 2SB1228 | PNP Transistor |