2SB1289 Overview
Key Specifications
Description
With TO-220C package - Complement to type 2SD1580 - Low collector saturation voltage - Wide area of safe operation APPLICATIONS - For use in low frequency power amplifier applications,power drivers and DC-DC converters PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE -80 -80 -5 -7 -10 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA; IB=0 IC=-50µA; IE=0 IE=-50µA; IC=0 IC=-4A; IB=-0.4A IC=-4A; IB=-0.4A VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IE=0 ; VCB=-10V; f=1MHz IC=-0.5A ; VCE=-5V 100 MIN -80 -80 -5 2SB1289 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V V V -1.0 -1.5 -10 -10 320 200 12 V V µA µA pF MHz hFE Classifications E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1289 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3.
