2SB1287 Overview
Description
With TO-220Fa package - High DC current gain - Low saturation voltage - Complement to type 2SD1765 - DARLINGTON APPLICATIONS - For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -8 -2 -3 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1287 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance CONDITIONS IC=-5mA; IB=0 IC=-50µA; IE=0 IC=-1A ;IB=-1mA VCB=-100V; IE=0 VEB=-7V; IC=0 IC=-1A ; VCE=-2V IE=0 ; VCB=-10V;f=1MHz 1000 35 MIN -100 -100 -1.5 -10 -3.0 10000 pF TYP. MAX UNIT V V V µA mA SYMBOL V(BR)CEO V(BR)CBO VCEsat ICBO IEBO hFE COB 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1287 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3.
