2SB1286 Datasheet and Specifications PDF

The 2SB1286 is a SILICON POWER TRANSISTOR.

Part Number2SB1286 Datasheet
ManufacturerSavantIC
Overview ·With TO-220C package ·Complement to type 2SD1646 ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector; conn. Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA,IB=0 IC=-1mA,IE=0 IE=-5mA, IC=0 IC=-1A ,IB=-1mA IC=-1A ,IB=-1mA VCB=-100V, IE=0 VCE=-100V, IB=0 VEB=-7V, IC=0 IC=-1A ; VCE=-2V 1000 MIN -100 -100 -7 2SB128.
Part Number2SB1286 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain- :hFE = 1000(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage- :V(BR)CEO = -100V(Min) ·Low Collector-Emitter Saturation Voltage :VCE(sat) = -1.5V(Max)@ IC= -1A ·Complement to T. nless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA, IB= 0 -100 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA, IE= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -1mA -1.5 V ICBO C.

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