Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Min) @IC= -5A
Good Linearity of hFE
Complement to Type 2SD2062
With TO-3PN package
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Power driver and general purpose applic
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isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SD2062 ·With TO-3PN package ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power driver and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-7
A
80
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SB1345
isc website： www.iscsemi.
2SB1345 Datasheet
