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2SB1420 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) High DC Current Gain- : hFE= 2000(Min)@IC= -8A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for chopper regulator, DC motor driver and general purpose applicatio

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000(Min)@IC= -8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Driver for chopper regulator, DC motor driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage -120 V -120 V -6 V IC Collector Current-Continuous ICP Collector Current-Pulse -16 A -26 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1420 isc website：www.