Datasheet Details
| Part number | 2SB1429 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.37 KB |
| Description | PNP Transistor |
| Download | 2SB1429 Download (PDF) |
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| Part number | 2SB1429 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 199.37 KB |
| Description | PNP Transistor |
| Download | 2SB1429 Download (PDF) |
|
|
|
·High Current Capability ·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Complement to Type 2SD2155 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1429 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1429 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;
IB= 0 -180 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1429 | Silicon PNP Transistor | Toshiba Semiconductor |
 |
2SB1429 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1420 | PNP Transistor |
| 2SB1421 | PNP Transistor |
| 2SB1400 | PNP Transistor |
| 2SB1402 | PNP Transistor |
| 2SB1403 | PNP Transistor |
| 2SB1404 | PNP Transistor |
| 2SB1411 | PNP Transistor |
| 2SB1419 | PNP Transistor |
| 2SB1430 | PNP Transistor |
| 2SB1431 | PNP Transistor |