2SB1429 Description
·High Current Capability ·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 -180 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A;.
2SB1429 is PNP Transistor manufactured by Inchange Semiconductor .
·High Current Capability ·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 -180 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A;.