| Part Number | 2SB1429 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer . . |
2SB1429 Datasheet and Specifications PDF
The 2SB1429 is a Silicon PNP Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|---|
| Min Operating Temp | -55 °C |
| Part Number | 2SB1429 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Current Capability ·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Complement to Type 2SD2155 ·Minimum Lot-to-Lot variations for robust device performance a. MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 -180 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A -3.0 V VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -180V ; IE= 0 -5 μA IEBO Emi. |
| Part Number | 2SB1429 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PL package ·Complement to type 2SD2155 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Emitt. voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-8A ;IB=-0.8A IC=-6A ; VCE=-5V VCB=-180V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-6A ; VCE=-5V IC=-1A ; VCE=-5. |