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2SB1429 - PNP Transistor

General Description

High Current Capability High Power Dissipation Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) Complement to Type 2SD2155 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recom

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isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Complement to Type 2SD2155 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.