2SB1429 Description
·High Current Capability ·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 -180 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A;.
2SB1429 is PNP Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
| 2SB1429 | Silicon PNP Transistor | |
SavantIC |
2SB1429 | SILICON POWER TRANSISTOR |
·High Current Capability ·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 -180 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A;.