2SB1429 Overview
·High Current Capability ·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 -180 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A;.
| Part number | 2SB1429 |
|---|---|
| Datasheet | 2SB1429-INCHANGE.pdf |
| File Size | 199.37 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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·High Current Capability ·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 -180 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SB1429 | Silicon PNP Transistor | Toshiba Semiconductor | |
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2SB1429 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB1420 | PNP Transistor |
| 2SB1421 | PNP Transistor |
| 2SB1400 | PNP Transistor |
| 2SB1402 | PNP Transistor |
| 2SB1403 | PNP Transistor |
| 2SB1404 | PNP Transistor |
| 2SB1411 | PNP Transistor |
| 2SB1419 | PNP Transistor |
| 2SB1430 | PNP Transistor |
| 2SB1431 | PNP Transistor |