Datasheet Details
| Part number | 2SB1420 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.95 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1420-INCHANGE.pdf |
|
|
Overview: isc Silicon PNP Darlington Power Transistor.
| Part number | 2SB1420 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.95 KB |
| Description | PNP Transistor |
| Datasheet | 2SB1420-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000(Min)@IC= -8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Driver for chopper regulator, DC motor driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage -120 V -120 V -6 V IC Collector Current-Continuous ICP Collector Current-Pulse -16 A -26 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1420 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1420 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1420 | Silicon PNP Transistor | Sanken electric |
| Part Number | Description |
|---|---|
| 2SB1421 | PNP Transistor |
| 2SB1429 | PNP Transistor |
| 2SB1400 | PNP Transistor |
| 2SB1402 | PNP Transistor |
| 2SB1403 | PNP Transistor |
| 2SB1404 | PNP Transistor |
| 2SB1411 | PNP Transistor |
| 2SB1419 | PNP Transistor |
| 2SB1430 | PNP Transistor |
| 2SB1431 | PNP Transistor |