2SB1429 Overview
Description
With TO-3PL package - Complement to type 2SD2155 APPLICATIONS - Power amplifier applications - Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3PL) and symbol SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -180 -180 -5 -15 -1.5 150 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-8A ;IB=-0.8A IC=-6A ; VCE=-5V VCB=-180V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-6A ; VCE=-5V IC=-1A ; VCE=-5V IE=0;f=1MHz;VCB=-10V 55 30 MIN -180 2SB1429 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -3.0 -1.5 -5 -5 160 V V µA µA 10 340 MHz pF hFE-1 classifications R 55-10 O 80-160 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1429 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1429 4.