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2SB1430 - PNP Transistor

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Part number 2SB1430
Manufacturer INCHANGE
File Size 214.87 KB
Description PNP Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and lowspeed switching applications.

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