Datasheet Details
| Part number | 2SB1530 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.65 KB |
| Description | PNP Transistor |
| Download | 2SB1530 Download (PDF) |
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| Part number | 2SB1530 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.65 KB |
| Description | PNP Transistor |
| Download | 2SB1530 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SD2337 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier color TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A Collector Power Dissipation PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 W 20 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SB1530 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1530 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
isc Silicon PNP Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1530 | Silicon PNP Transistor | Hitachi Semiconductor |
 |
2SB1530 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1502 | PNP Transistor |
| 2SB1503 | PNP Transistor |
| 2SB1507 | PNP Transistor |
| 2SB1508 | PNP Transistor |
| 2SB1548 | PNP Transistor |
| 2SB1548A | PNP Transistor |
| 2SB1550 | PNP Transistor |
| 2SB1551 | PNP Transistor |
| 2SB1555 | PNP Transistor |
| 2SB1556 | PNP Transistor |