| Part Number | 2SB1530 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SB1530
Silicon PNP Triple Diffused
Application
Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD2337
Outline
TO-220FM
12 3
1. Base 2. Collector 3. Emit.
I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage VCE(sat) VBE
60 60 * * V V I C = *500 mA, IB = *50 mA I CE = *4 A, IC = *50 mA Notes: 1. The 2SB1530 is grouped by hFE1 as follows. B 60 to 120 C 100 to 200 2. Pulse test. 2 2SB1530 Maximum Collector Dissipation . |
2SB1530 Datasheet and Specifications PDF
The 2SB1530 is a Silicon PNP Transistor.
Key Specifications
| Part Number | 2SB1530 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220Fa package ·High VCEO ·Complement to type 2SD2337 APPLICATIONS ·For low frequency power amplifier color TV vertical deflection output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Col. oltage Collector cut-off current DC current gain DC current gain CONDITIONS IC=-50mA , RBE=< IE=-5mA , IC=0 IC=-500mA ;IB=-50mA IC=-50mA ; VCE=-4V VCB=-120V ;IE=0 IC=-50mA ; VCE=-4V IC=-500mA ; VCE=-10V 60 60 MIN -150 -6 2SB1530 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 TYP. MAX UNIT. |
| Part Number | 2SB1530 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Complement to Type 2SD2337 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed fo. itter Breakdown Voltage IC= -10mA; RBE= ∞ -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -3.0 V VBE(on) Base-Emitter On Voltage IC= -50mA; VCE= -4V -1.0 V ICBO Collector Cutoff Current VCB= -120V; I. |