2SB1530 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current DC current gain DC current gain CONDITIONS IC=-50mA , RBE=< IE=-5mA , IC=0 IC=-500mA ;IB=-50mA IC=-50mA ; VCE=-4V VCB=-120V ;IE=0 IC=-50mA ; VCE=-10V 60...