2SB1530 Overview
Description
With TO-220Fa package - High VCEO - Complement to type 2SD2337 APPLICATIONS - For low frequency power amplifier color TV vertical deflection output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.5 150 -45~150 CONDITIONS Open emitter Open base Open collector VALUE -200 -150 -6 -2 -5 20 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current DC current gain DC current gain CONDITIONS IC=-50mA , RBE=< IE=-5mA , IC=0 IC=-500mA ;IB=-50mA IC=-50mA ; VCE=-4V VCB=-120V ;IE=0 IC=-50mA ; VCE=-4V IC=-500mA ; VCE=-10V 60 60 MIN -150 -6 2SB1530 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 TYP. MAX UNIT V V -3.0 -1.0 -1 200 V V µA hFE-1 Classifications B 60-120 C 100-200 2 SavantIC Semiconductor Product Specification Silicon Power Transistors PACKAGE OUTLINE 2SB1530 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3.
