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2SB1531 - Transistors

Key Features

  • q Optimum for 40W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <.
  • 2.5V s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC.
  • 130.
  • 110.
  • 5.
  • 10.
  • 6 50 2.5 Junction.

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Datasheet Details

Part number 2SB1531
Manufacturer Matsushita Electric
File Size 177.72 KB
Description Transistors
Datasheet download datasheet 2SB1531 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttie Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington Productnnua For power amplification Complementary to 2SD2340 s Features q Optimum for 40W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.