Datasheet Details
| Part number | 2SB1531 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.97 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB1531-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Darlington Power Transistor 2SB1531.
| Part number | 2SB1531 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.97 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SB1531-InchangeSemiconductor.pdf |
|
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·High DC Current Gain- : hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A ·plement to Type 2SD2340 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -6 A 50 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1531 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 -130 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1531 | Transistors | Matsushita Electric |
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|---|---|
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