High DC Current Gain-
: hFE= 5000(Min)@IC= -5A
Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -5A
Complement to Type 2SD2340
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for power amplifier applicati
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isc Silicon PNP Darlington Power Transistor
2SB1531
DESCRIPTION ·High DC Current Gain-
: hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD2340 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-130
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-6
A
50 W
3
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.
2SB1531 Datasheet
