| Part Number | 2SB1531 Datasheet |
|---|---|
| Manufacturer | Matsushita Electric |
| Overview |
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q Optimum for 40W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < *2.5V s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage P. |
2SB1531 Datasheet and Specifications PDF
The 2SB1531 is a Transistors.
| Part Number | 2SB1531 Datasheet |
|---|---|
| Description | Silicon PNP Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD2340 ·Minimum Lot-to-Lot variations for robust device performa. reakdown Voltage IC= -30mA; IB= 0 -130 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -5mA -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -5mA -3.0 V ICBO Collector Cutoff Current VCB= -130V; IE= 0 -100 μA ICEO Collector Cutoff Current VCE= -130V; IB= 0 -. |