Datasheet Details
| Part number | 2SB1567 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.17 KB |
| Description | PNP Transistor |
| Download | 2SB1567 Download (PDF) |
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| Part number | 2SB1567 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.17 KB |
| Description | PNP Transistor |
| Download | 2SB1567 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain ·Built-in resistor between base and emitter ·Complement to Type 2SD2398 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -3 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1567 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1567 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA;
isc Silicon PNP Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1567 | Power Transistor | Rohm |
 |
2SB1567 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1560 | PNP Transistor |
| 2SB1565 | PNP Transistor |
| 2SB1566 | PNP Transistor |
| 2SB1568 | PNP Transistor |
| 2SB1569 | PNP Transistor |
| 2SB1502 | PNP Transistor |
| 2SB1503 | PNP Transistor |
| 2SB1507 | PNP Transistor |
| 2SB1508 | PNP Transistor |
| 2SB1530 | PNP Transistor |