2SB1567 Datasheet PDF

The 2SB1567 is a Power Transistor.

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Part Number2SB1567 Datasheet
ManufacturerROHM
Overview 2SB1580 / 2SB1316 / 2SB1567 Transistors Power Transistor (−100V , −2A) 2SB1580 / 2SB1316 / 2SB1567 !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and e. 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980 / 2SD2398. !External dimensions (Units : mm) 2SB1580 1.0 1.5 0.4 4.0 2.5 0.5 (1) 3.0 0.5 (3) 1.5 0.4 1.5 4.5 1.6 (2) !Absolute m.
Part Number2SB1567 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220F package ·Complement to type 2SD2398 ·High DC current gain. ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (T. 00 V V(BR)CBO Collector-base breakdown voltage IC=-50µA; IE=0 -100 V VCEsat Collector-emitter saturation voltage IC=-1A ; IB=-1mA -1.5 V ICBO Collector cut-off current VCB=-100V;IE=0 -10 µA IEBO Emitter cut-off current VEB=-7V;IC=0 -3.0 mA hFE DC current gain IC=-1A ; VCE=-2V.
Part Number2SB1567 Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain ·Built-in resistor between base and emitter ·Complement to Type 2SD2398 ·Minimum Lot-to-Lot variations for robust dev. V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -1mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE DC Curren.