2SB1567 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain ·Built-in resistor between base and emitter ·plement to Type 2SD2398 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power switching applications. IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA;.

