Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min)
High DC Current Gain
Built-in resistor between base and emitter
Complement to Type 2SD2398
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for high powe
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isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain ·Built-in resistor between base and emitter ·Complement to Type 2SD2398 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-8
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-3
A
2 W
20
150
℃
Tstg
Storage Temperature
-55~150
℃
2SB1567
isc website：www.
2SB1567 Datasheet
