Datasheet4U Logo Datasheet4U.com

2SB1565 - PNP Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Collector Power Dissipation- : PC= 25 W@ TC= 25℃ Low Collector Saturation Voltage Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desig

📥 Download Datasheet

Datasheet preview – 2SB1565

Datasheet Details

Part number 2SB1565
Manufacturer INCHANGE
File Size 226.20 KB
Description PNP Transistor
Datasheet download datasheet 2SB1565 Datasheet
Additional preview pages of the 2SB1565 datasheet.

📁 Similar Datasheet

  • 2SB1565 - Power Transistor (Rohm)
  • 2SB1565 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • 2SB1565 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB156 - PNP Transistor (Hitachi)
  • 2SB1560 - Silicon PNP Transistor (Sanken electric)
  • 2SB1560 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SB1561 - Medium Power Transistor (Rohm)
  • 2SB1561-Q - Transistor (TY Semiconductor)
  • 2SB1561U - PNP Silicon Diode (SURGE)
  • 2SB1562 - Silicon PNP Power Transistor (Inchange Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -6 A 2 W 25 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1565 isc website：www.iscsemi.
Published: |