Datasheet Details
| Part number | 2SB1568 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.13 KB |
| Description | PNP Transistor |
| Download | 2SB1568 Download (PDF) |
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| Part number | 2SB1568 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.13 KB |
| Description | PNP Transistor |
| Download | 2SB1568 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD2399 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -6 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1568 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB1568 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA;
isc Silicon PNP Darlington Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB1568 | Power Transistor | Rohm |
 |
2SB1568 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SB1560 | PNP Transistor |
| 2SB1565 | PNP Transistor |
| 2SB1566 | PNP Transistor |
| 2SB1567 | PNP Transistor |
| 2SB1569 | PNP Transistor |
| 2SB1502 | PNP Transistor |
| 2SB1503 | PNP Transistor |
| 2SB1507 | PNP Transistor |
| 2SB1508 | PNP Transistor |
| 2SB1530 | PNP Transistor |