| Part Number | 2SB1568 Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-220F package ·Complement to type 2SD2399 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fi. IC=-1mA; IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-50µA; IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA; IC=0 -7 V VCEsat Collector-emitter saturation voltage IC=-2A ; IB=-4mA -1.0 -3.0 V ICBO Collector cut-off current VCB=-80V;IE=0 -100 µA IEBO Em. |
2SB1568 Datasheet PDF
The 2SB1568 is a SILICON POWER TRANSISTOR.
| Part Number | 2SB1568 Datasheet |
|---|---|
| Description | Power Transistor |
| Manufacturer | ROHM |
| Overview | 2SB1568 Transistors Power Transistor (−80V, −4A) 2SB1568 z Features 1) Available in TO-220 FN package 2) Darling connection provides high dc current gain (hFE) 3) Damper diode is incorporated 4) Buil. 1) Available in TO-220 FN package 2) Darling connection provides high dc current gain (hFE) 3) Damper diode is incorporated 4) Built in resistors between base and emitter 5) Two millimeters lower than TO-220 FP which allows higher density mounting 6) Complementary pair with 2SD2399 zExternal dimensi. |
| Part Number | 2SB1568 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD2399 ·Minimum Lot-to-Lot variations for robust device pe. NIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -7 V VCE(sat)★1 Collector-Emitter Saturation Voltage IC= -2A; IB= -4mA -1.0 V ICBO Collector. |