2SB1568
Overview
- 0 φ3.2
- 5 2.8
- 8 ROHM : TO-220FN zApplications Power amplifler zAbsolute maximum rating (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP PC Collector dissipation Junction temperature Storage temperature zElectrical characteristics (unless otherwise noted, Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current w w w t a .D Tj Tstg Limits -80 -80 -7 -4 -6 2 30 150 -55 to +150 e h S a Unit V V V A(DC) A(Pulse) ∗ W(Ta=25°C) W(Tc=25°C) °C °C U 4 t e
- 54 2.54
- 75 (1) (2) (3)
- 6 m o .c (1) Base (Gate) (2) Collector (Drain) (3) Emitter (Sourse) C
- 0 zEquivalent circuit B R1 R2 E R1 = 3kΩ R2 = 300Ω : : B : Base C : Collector E : Emitter Symbol BVCBO BVCEO BVEBO Min. -80 -80 -7 - - 1000 - - - Typ. - - - - - 5000 -1.0 12 35 Max. - - - -100 -3 -3 10000 -1.5 - Unit V V V µA mV - V MHz pF Conditions IC = -50µA IC = -1mA IE = -5mA VCB = -80V VEB = -5V VCE= -3V, IC = -2A IC/IB= -2A/ -4mA VCE= -5V, IE = 0.5A, f=10MHz VCB= -10V, IE = 0A, f=1MHz ICBO Emitter cutoff current IEBO DC current gain ∗1 Collector-emitter hFE breakdown voltage ∗1 Collector-emitter VCE(sat) saturation voltage fT ∗1 ∗2 Transition frequency Output capacitance Cob ∗1 Measured using pulse current. ∗2 Transition frequency of the device. w w w .D t aRev.A h S a t e e 4U . m o c 1/3 2SB1568 Trans
