Part 2SB1561
Description Medium Power Transistor
Category Transistor
Manufacturer ROHM
Size 1.40 MB
ROHM
2SB1561

Overview

  • 5 W PD*3
  • 0 W Tj 150 ℃ Tstg -55 to +150 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = -50μA -60 - - V Collector-emitter breakdown voltage BVCEO IC = -1mA -60 - - V Emitter-base breakdown voltage BVEBO IE = -50μA -6 - - V Collector cut-off current ICBO VCB = -50V - - -100 nA Emitter cut-off current IEBO VEB = -5V - - -100 nA Collector-emitter saturation voltage VCE(sat)*4 IC = -1A, IB = -50mA - -150 -350 mV DC current gain hFE1*4 VCE = -2V, IC = -500mA 120 - 270 - hFE2*4 VCE = -2V, IC = -1.5A 45 - - Transition frequency f T*4 VCE = -2V, IE = -500mA, f = 100MHz - 200 - MHz Outpu