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2SB1570 - PNP Transistor

General Description

High Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A Complement to Type 2SD2401 Minimum Lot-to-Lot variations for robust device performance and reliable operatio APPLICATIONS Designed for audio,series

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2401 ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio APPLICATIONS ·Designed for audio,series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1570 isc website：www.