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isc Silicon PNP Power Transistor
DESCRIPTION ·High-speed Switching ·Low Collector to Emitter Saturation Voltage
: VCE(sat)= -0.5V(Max.)@IC= -2A ·Full-pack Package With Outstanding Insulation,
Which Can Be Installed to The Heat Sink With One Screw ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-voltage switching and general purpose
applications.