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2SB1625 - PNP Transistor

General Description

High Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min) Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -5A Complement to Type 2SD2494 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio,serie

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -110V(Min) ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD2494 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio,series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -110 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1625 isc website：www.