900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

2SB1626 Datasheet Preview

2SB1626 Datasheet

PNP Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
2SB1626
DESCRIPTION
·High DC Current Gain
·Low-Collector Saturation Voltage
·Complement to Type 2SD2495
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for audio,series regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-110
V
VCEO
Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
IB
Base Current- Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-1
A
30
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SB1626 Datasheet Preview

2SB1626 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A; IB= -5mA
ICBO
Collector Cutoff Current
VCB= -110V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -5A; VCE= -4V
COB
Collector Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
hFE Classifications
O
P
Y
IE= 0.5A; VCE= -12V
5000-12000 6500-20000 15000-30000
2SB1626
MIN TYP. MAX UNIT
-110
V
-2.5
V
-3.0
V
-100 μA
-100 μA
5000
30000
110
pF
100
MHz
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SB1626
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
PDF Download

2SB1626 Datasheet PDF





Similar Datasheet

1 2SB1622 Power Transistor
Sanken
2 2SB1623 Silicon PNP Transistor
Panasonic Semiconductor
3 2SB1623A Silicon PNP epitaxial planar type Transistor
Panasonic
4 2SB1624 Silicon PNP Transistor
Sanken electric
5 2SB1624 PNP Transistor
INCHANGE
6 2SB1624 SILICON POWER TRANSISTOR
SavantIC
7 2SB1625 Silicon PNP Transistor
Sanken electric
8 2SB1625 PNP Transistor
INCHANGE
9 2SB1625 SILICON POWER TRANSISTOR
SavantIC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy