High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
Low Collector to Emitter Saturation Voltage
: VCE(sat)= -1.5V(Max.)@IC= -2A
Complement to Type 2SD2525
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed fo
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isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Low Collector to Emitter Saturation Voltage
: VCE(sat)= -1.5V(Max.)@IC= -2A ·Complement to Type 2SD2525 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-3
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-0.5
A
1.
2SB1640 Datasheet
