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2SB1655 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -6 A 2 W 25 150 ℃ -55~150 ℃ 2SB1655 isc website：www.iscsemi.