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2SB1657 - PNP Transistor

General Description

High Collector Current -IC= -5A High DC Current Gain- : hFE= 150~600@IC= -1A Low-Collector Saturation Voltage- : VCE(sat)= -0.15V(Max.)@IC= -0.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amp

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current -IC= -5A ·High DC Current Gain- : hFE= 150~600@IC= -1A ·Low-Collector Saturation Voltage- : VCE(sat)= -0.15V(Max.)@IC= -0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier and switching applications.