Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -90V(Min)
Low Collector Saturation Voltage-
: VCE(sat)= -0.7V(Max.) @IC= -3A
Wide area of safe operation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for TV horizo
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isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -90V(Min) ·Low Collector Saturation Voltage-
: VCE(sat)= -0.7V(Max.) @IC= -3A ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for TV horizontal deflection power output
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC IE PC TJ
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Emitter Current-Continuous Collector Power Dissipation @Tc=25℃ Junction Temperature
-220
V
-90
V
-5
V
-10
A
10
A
32
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SB468
isc website：www.iscsemi.
2SB468 Datasheet
