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2SB506 - PNP Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.) @IC= -5A Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low freq

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.) @IC= -5A ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @Tc=25℃ TJ Junction Temperature -5 A 60 W 150 ℃ Tstg Storage Temperature -55~150 ℃ INCHANGE Semiconductor 2SB506 isc website：www.iscsemi.