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2SB515 - PNP Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.) @IC= -2A Complement to Type 2SD331 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequenc

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB515 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.) @IC= -2A ·Complement to Type 2SD331 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @Tc=25℃ -5 A 1.