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2SB521 - PNP Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.) @IC= -3A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high current switching applications.

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB521 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max.) @IC= -3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -60 V -8 V IC Collector Current-Continuous PC Collector Power Dissipation @Tc=25℃ TJ Junction Temperature Tstg Storage Temperature -5 A 25 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.