2SB541
2SB541 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
- High Power Dissipation-
: PC= 100W(Max)@TC=25℃
- plement to Type 2SD388
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio frequency power amplifier applications.
- Suitable for output stage of 40~50 watts audio amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-110
VCEO
Collector-Emitter Voltage
-100
VEBO
Emitter-Base Voltage
-6
Collector Current-Continuous
-8
Collector Current-Pulse
Collector Power Dissipation @TC=25℃
Junction Temperature
-12
℃...
