Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V (Min)
Collector Power Dissipation-
: PC= 30W(Max)@ TC= 25℃
Complement to Type 2SD402
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in line-operated colo
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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB547
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V (Min) ·Collector Power Dissipation-
: PC= 30W(Max)@ TC= 25℃ ·Complement to Type 2SD402 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in line-operated color TV vertical deflection
of complementary symmetry circuit applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC ICM IBM PC TJ
Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature
-200
V
-150
V
-5.0
V
-2
A
-3
A
-1.
2SB547 Datasheet
