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2SB548 - PNP Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) With TO-126 package Complement to Type 2SD414 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for low frequency power amplifiers applications.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB548 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·With TO-126 package ·Complement to Type 2SD414 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.8 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -1.5 A 1 W 10 150 ℃ -55~150 ℃ isc website：www.iscsemi.