2SB549 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·With TO-126 package ·plement to Type 2SD415 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. 1 isc & iscsemi is registered trademark Powisc Silicon PNP er Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor 2SB549...
