2SB556
2SB556 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
- High Power Dissipation-
: PC= 100W(Max)@TC=25℃
- plement to Type 2SD426
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier applications.
- Remended for 80W high-fidelity audio frequency amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Junction Temperature
-12
℃
Tstg
Storage Temperature
-65~150 ℃
2SB556 isc website：.iscsemi....
